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Growth of single crystal 3C-SiC films on large area off-axis (111) Si substrate by chemical vapour deposition technique is here reported. The growth was conducted on off-axis Si substrates due to the ability of the misorientation to reduce anti-phase disorder in the 3C-SiC film. 3C-SiC films show an extremely flat surface and interface, stimulating further interest for electrical and mechanical device applications even if a very strong bow, due to the strain induced by the growth process, is observed. Film quality was proved to be high by several investigation techniques and a study of the crystalline defects is also presented. Optical profilometer measurements were also conducted to evaluate accurately the asymmetric curvature of the whole system.
Publication date: 
1 Jan 2010

A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, G Condorelli, MA Di Stefano, B Cafra, A La Magna, F La Via

Biblio References: 
Volume: 518 Issue: 6 Pages: S165-S169
Thin Solid Films