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We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si0.22Ge0.78 heteroepitaxial layer deposited on Si substrates in tensile, neutral, and compressive strain conditions. The three regimes have been obtained by interposing between the SiGe layer and the substrate a fully relaxed Ge layer, a partially relaxed Ge layer, or growing directly the alloy on Si. We found that the deposition of a Ge buffer layer prior to the growth of the SiGe is very promising in view of the realization of thin virtual substrates on silicon to be used for the deposition of strain-controlled high Ge content SiGe alloys. We demonstrate that this is mainly due to the strain relaxation mechanism in the Ge layer occurring via insertion of pure edge 90° misfit dislocations (MDs) and to the confinement of threading arms in to the Ge layer …
American Institute of Physics
Publication date: 
15 Mar 2010

Giovanni Capellini, Monica De Seta, Yan Busby, Marialilia Pea, Florestano Evangelisti, Giovanni Nicotra, Corrado Spinella, Michele Nardone, Claudio Ferrari

Biblio References: 
Volume: 107 Issue: 6 Pages: 063504
Journal of Applied Physics