The discovery of the so called" giant dielectric permittivity phenomenon" in CaCu 3 Ti 4 O 12 (CCTO) perovskyte-related material reaching dielectric constant values up to 10 5 at room temperature, has generated a large interest for this material and related compounds. In this context, the study of the related oxide materials can be of great interest. In this work, we report on the results of a recent study of the deposition of Nd 2/3 Cu 3 Ti 4 O 12 (NCTO) thin films on Pt/TiO 2/SiO 2/Si (100) stacks by Metal-Organic Chemical Vapor Deposition (MOCVD). Nd 2/3 Cu 3 Ti 4 O 12 thin films have been deposited using a novel molten multi-metal source, consisting of the Ti (tmhd) 2 (O-iPr) 2, Nd (hfa) 3• diglyme, and Cu (tmhd) 2 (H-tmhd= 2, 2, 6, 6-tetramethyl-3, 5-heptandione; O-iPr= iso-propoxide; H-hfa= 1, 1, 1, 5, 5, 5-hexafluoro-2, 4-pentanedione; diglyme= CH 3 O (CH 2 CH 2 O) 2 CH 3) precursor mixture. The structural and …