Multidirectional SPEG (Solid Phase Epitaxial Growth) of silicon has been investigated in micro and nanoamorphous structures generated on a crystalline substrate by a nano-sized ion beam, Gaussian shaped and with a standard deviation of about 5 nm. The 20 keV Ga+ ions were implanted at a fluence of 5 × 1014 ions cm−2 in a bulk Si(1 0 0) single crystal. Two structures were used for the implants: circular regions of 100 nm and 1 μm diameters respectively and straight lines 10 nm in width and few microns in length along (1 0 0) or (1 1 0) directions. The lateral spread of ions has been taken into account in the damage estimation. Transmission Electron Microscopy indicates that the structures are made of an amorphous core surrounded by a defective and filamentary shell. The recovery of the damaged outer regions promptly occurs during the early stages of the thermal treatment at 500–600 °C for all the …