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Type: 
Patent
Description: 
A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon pin light absorption layer over it. A refractory metal layer of just about 1 nm thickness may ...
Publisher: 
Publication date: 
29 Aug 2012
Authors: 

Salvatore Lombardo, Cosimo Gerardi, Sebastiano Ravesi, Marina Foti, Cristina Tringali, Stella Loverso, Nicola Costa, , Nicola Costa

Biblio References: 
Origin: 
US20130048071