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Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewUsing several types of surface analysis (Optical profilometers (OP), Atomic Force Microscopies (AFM), Scanning Electron Microscopies (SEM) and cross-sectional high-resolution Transmission Electron Microscopies (TEM)) we analyze the surface morphologies of misoriented 4H silicon carbide after pre-growth hydrogen etching and homo-epitaxial growths. We observed the characteristic self-ordering of nano-facets on any analyzed surface. This nano-faceting, which should not be confused with step bunching, can be considered as a close-to-equilibrium instability, for this reason can be hindered.
Publisher: 
Trans Tech Publications
Publication date: 
1 Jan 2011
Authors: 

Massimo Camarda, Andrea Severino, Patrick Fiorenza, Vito Raineri, S Scalese, Corrado Bongiorno, Antonino La Magna, Francesco La Via, Marco Mauceri, Danilo Crippa

Biblio References: 
Volume: 679 Pages: 358-361
Origin: 
Materials Science Forum