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Type: 
Conference
Description: 
Raman microscopy has been used to study the stress distribution on 3C-SiC/Si (100) micro-machined free standing structures. Linear scans along different structures reveal similar trends of the TO mode Raman Shift. We have found that, independently of the microstructure considered, the Raman frequency decreases close to the undercut. We compare our experimental measurements with FEM simulations finding that, close to the undercut, the stress tensor becomes non-diagonal, modifying the Raman shift to stress relation.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2011
Authors: 

Nicolò Piluso, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Antonino La Magna, Giuseppe D'Arrigo, Francesco La Via

Biblio References: 
Volume: 679 Pages: 141-144
Origin: 
Materials Science Forum