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Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewIn this study we examined the structural evolution of graphene grown on 8 off-axis 4H-SiC (0001) substrates at temperatures from 1600 C to 1700 C in Ar ambient. Morphological transformation of SiC substrate after annealing was examined by Tapping Mode Atomic Force Microscopy. Moreover, by etching-out graphene layers from graphitized SiC substrates in selective trenches we determined the number of graphene layers. Numbers of graphene layers were then independently confirmed by Transmission Electron Microscopy imaging.
Publisher: 
Trans Tech Publications
Publication date: 
1 Jan 2011
Authors: 

Sushant Sonde, Carmelo Vecchio, Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Martin Rambach, Emanuele Rimini, Vito Raineri

Biblio References: 
Volume: 679 Pages: 797-800
Origin: 
Materials Science Forum