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Type: 
Conference
Description: 
Micro-Raman spectroscopy has been used to study the dependence between the carrier concentration and electrical mobility in n-doped 3C-SiC films grown on (111) and (100) Si oriented substrates. Local stacking variations observed on the (111) 3C-SiC surface lead to a worse crystal morphology compared to (100) 3C-SiC films resulting in a decrease of the average bulk mobility.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2011
Authors: 

Nicolò Piluso, Andrea Severino, Massimo Camarda, Andrea Canino, Antonino La Magna, Francesco La Via

Biblio References: 
Volume: 679 Pages: 221-224
Origin: 
Materials Science Forum