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Type: 
Conference
Description: 
Article PreviewArticle PreviewArticle PreviewUltraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose a 4H-SiC Schottky photodiode with a continuous very thin Ni 2 Si layer operating at 0V, properly designed for UV radiation monitoring.
Publisher: 
Trans Tech Publications
Publication date: 
1 Jan 2016
Authors: 

Massimo Mazzillo, Antonella Sciuto, Fabrizio Roccaforte, Corrado Bongiorno, Roberto Modica, Salvatore Marchese, Paolo Badalà, Denise Calì, Francesco Patanè, Beatrice Carbone, Alfio Russo, Salvatore Coffa

Biblio References: 
Volume: 858 Pages: 1015-1018
Origin: 
Materials Science Forum