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Silicon carbide (SiC) is the third hardest material after diamond and boron nitride, which gives SiC its excellent properties such as hightemperature stability, imperviousness to chemical attack, and biological compatibility. Indeed the simple fact that the Si–C bond is very strong (318kJ/mol compared to 222 kJ/mol for the Si–Si bond) make the synthesis of SiC materials, in either amorphous, polycrystalline or monocrystalline solid-state form, a challenge. The robust nature of the Si–C bond also makes it difficult to process SiC materials to make traditional devices such as electronic switches (transistors, MOSFETs) as well as micro-electro-mechanical (MEM) devices. In all cases, the starting point to realizing a SiC-based device is the growth (or deposition) of SiC films or bulk crystals, followed by how these materials are processed to achieve the desired device or system component. The latter topic is the subject of Chapter 10, where SiC MEMS and bioMEMS technology will be introduced.
Publication date: 
1 Jan 2012

CW Locke, A Severino, F La Via, M Reyes, M Register, SE Saddow

Biblio References: 
Pages: 17-61
Silicon Carbide Biotechnology