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Type: 
Journal
Description: 
Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy–arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants.
Publisher: 
AIP Publishing
Publication date: 
31 Oct 2016
Authors: 

T Kalliovaara, Jonatan Slotte, Ilja Makkonen, J Kujala, Filip Tuomisto, R Milazzo, G Impellizzeri, G Fortunato, E Napolitani

Biblio References: 
Volume: 109 Issue: 18 Pages: 182107
Origin: 
Applied Physics Letters