-A A +A
The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on either bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication. In this work a comparison between single crystal and poly crystal 3C-SiC micro-machined structures will be presented. The free-standing structures realized (cantilevers and membrane) are also a suitable method for residual field stress investigation in 3C-SiC films. Measurement of the Raman shift indicates that the mono and poly-crystal 3C-SiC structures release the stress in different ways. Finite element analysis was performed to determine the stress field inside the films and provided a good fit to the experimental data. A comprehensive experimental and theoretical study of 3C-SiC MEMS structures has been performed and is presented.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2010

Ruggero Anzalone, Massimo Camarda, Daniel Alquier, M Italia, Andrea Severino, Nicolò Piluso, Antonino La Magna, Gaetano Foti, Christopher Locke, Stephen E Saddow, Alberto Roncaglia, Fulvio Mancarella, Antonella Poggi, Giuseppe D'Arrigo, Francesco La Via

Biblio References: 
Volume: 645 Pages: 865-868
Materials Science Forum