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The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2009

Francesco La Via, Gaetano Izzo, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, LMS Perdicaro, Giuseppe Abbondanza, F Portuese, G Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa

Biblio References: 
Volume: 600 Pages: 123-126
Materials Science Forum