Article PreviewArticle PreviewArticle PreviewIn this paper we study the surface morphology of< 11-20> 4 degree off, silicon terminated, 4H Silicon Carbide (4H-SiC) in terms of growth parameters and post growth argon thermal annealing. We find that out-of-equilibrium conditions favor the reduction of the surface roughness. Furthermore, we find preliminary indications that the same growth parameters that lead to the reduction of the surface roughness promote also a reduction of (1, 3) and (4, 4) stacking faults density.