Type:
Conference
Description:
A collection of slides from the author's conference presentation shows dopant activation by pulsed laser thermal annealing. It also discusses single pulse deep melt activation, layer electrical properties and specific multiple layer junctions properties.
Publisher:
IEEE
Publication date:
29 Sep 2009
Biblio References:
Pages: 1-16
Origin:
2009 17th International Conference on Advanced Thermal Processing of Semiconductors