In this work, the electrical properties of SiO 2/SiC interfaces onto a 2-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS capacitors gave an interface state density in the low 1× 10 12 eV-1 cm-2 range, which results comparable to the standard 4-off-axis 4H-SiC, currently used for device fabrication. From Fowler-Nordheim analysis and breakdown measurements, a barrier height of 2.9 eV and an oxide breakdown of 10.3 MV/cm were determined. The results demonstrate the maturity of the 2-off axis material and pave the way for the fabrication of 4H-SiC MOSFET devices on this misorientation angle.