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Type: 
Journal
Description: 
Dielectric breakdown of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported.
Publisher: 
The Electrochemical Society
Publication date: 
22 Aug 2008
Authors: 

Roberto Pagano, Salvatore Lombardo, Felix R Palumbo, Stefania Carloni, Paul Kirsch, Siddarth Krishnan, Chadwin Young, Rino Choi, Gennadi Bersuker, James Stathis

Biblio References: 
Volume: 14 Issue: 1 Pages: 303-309
Origin: 
ECS Transactions