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Type: 
Conference
Description: 
Growth of 3C-SiC films on an off-axis (111) Si substrate, with a miscut of 4 towards the< 110> direction, is here reported. An extensive material characterization has been conducted by means of Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and Raman spectroscopy, indicating a very promising film quality with extremely flat surface and interface. Notwithstanding the excellent film quality, the wafer bow is still limiting its full employment in device realization.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2010
Authors: 

Andrea Severino, Massimo Camarda, Nicolò Piluso, M Italia, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

Biblio References: 
Volume: 645 Pages: 167-170
Origin: 
Materials Science Forum