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Type: 
Conference
Description: 
This paper presents the technological process and electrical behaviour of SONOS FinFlash devices fabricated on silicon-on-insulator (SOI) substrates and including HfO2 in the inter poly dielectric (IPD). Using trimming techniques, ultra-scaled devices were processed with aggressive dimensions down to 10 nm channel width and 30 nm gate length. Good performances are obtained in Fowler-Nordheim (FN) operation on these structures.
Publisher: 
IEEE
Publication date: 
18 May 2008
Authors: 

C Jahan, E Nowak, L Perniola, M Gely, G Molas, S Lombardo, B De Salvo, S Deleonibus

Biblio References: 
Pages: 106-108
Origin: 
2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design