In this work we present a structural, optical and electrical characterization of SixC1−x/SiC multilayer systems with different silicon content. After the deposition process, an annealing treatment was carried out in order to induce the silicon nanocrystals formation. By means of energy-filtered transmission electron microscopy (EFTEM) we observed the structural morphology of the multilayers and the presence of crystallized silicon nanoprecipitates for samples annealed up to 1100 °C. We discuss the suitability of optical techniques such as Raman scattering and reflectance and transmittance (R&T) for the evaluation of the crystalline fraction of our samples at different silicon excess ranges. In addition, the combination of R&T measurements with simulation has proved to be a useful instrument to confirm the structural properties observed by EFTEM. Finally, we explore the origin of the extremely high current density …