Capacitance versus Voltage (CV) and Deep Level Transient Spectroscopy (DLTS) measurements of Al+ implanted p+ n diodes with Al+ implanted Junction Termination Extension are here studied. These diodes present CV characteristics like graded junction for low forward bias values, ie> 0.4 V, or like abrupt junctions for large reverse bias, ie between 0.4 V and-10V. The depth range of the graded junction, computed by the capacitance values, is much larger than the simulated tail of the ion implanted Al+ profile. DLTS spectra have been measured both in injection and standard configuration and always show minority carrier traps in the temperature range 0-300K. Three are the minority carrier related peaks, one attributed to the Al acceptor and the others to the D and D1 defects. The depth distribution of these hole traps will be discussed with respect to the apparent carrier concentration, obtained by CV analysis.