Thermoelectric transducers fabricated with both p and n-type heavily doped polysilicon thermoelements are presented. The devices are realized on front-side micromachined membranes obtained with typical CMOS passivation and intermetal dielectric layers, namely thermal silicon oxide, LPCVD silicon nitride and oxide. The polysilicon layers constituting the thermocouples are deposited on different interconnection levels and connected with Al/Si paths.
1 Jan 2008
Sensors And Microsystems