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Al2O3 grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on n-type 4H-SiC with a nominal thickness of 100nm has been characterized by Grazing Incidence X-Ray Diffraction (GIXD) and Specular X-Ray Reflectivity (SXR) measurements. After post-deposition, the samples were annealed at different temperatures and durations in argon atmosphere. The GIXD results reveal crystallization at temperatures above 900 C, most likely in the form of θ-Al2O3 or γ-Al2O3. However, the formation of a new, non-stoichiometric Al2O3 phase cannot be excluded. The crystalline domain size, evaluated from the peak FWHMs after subtraction of the instrumental broadening, is found to be almost equal (18±1nm), independent of T in the range 900 C≤ T≤ 1100 C and time in the range 1h≤ t≤ 3h. From SXR, mass density profiles are derived. Whereas the as grown film exhibits the lowest mass density, at 800 C a low …
Trans Tech Publications Ltd
Publication date: 
1 Jan 2007

Ulrike Grossner, Marco Servidori, Marc Avice, Ola Nilsen, Helmer Fjellvåg, Roberta Nipoti, Bengt Gunnar Svensson

Biblio References: 
Volume: 556 Pages: 683-686
Materials science forum