Chapter 5-SiC Technology-5.3 Contacts, Etching and Packaging-Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer

^-A A ⁺A

Type:

Journal

Description:

Publisher:

Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-

Publication date:

1 Jan 2005

Authors:

F Moscatelli, A Scorzoni, A Poggi, M Canino, R Nipoti

Biblio References:

Volume: 483485 Pages: 737-740

Origin:

Materials Science Forum

Link:

Scientific Productions