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Type: 
Journal
Description: 
Molecular dynamics based on the environment-dependent interatomic potential is used to investigate the influence of the nature and distribution of defects on solid state, homogeneous amorphization of Si. To this end, different kinds of defects, including single interstitials and vacancies (both uncorrelated and correlated distributions), bond defects, and small interstitial and vacancy clusters, have been considered. It is shown that the threshold defect concentration for amorphization depends on the defect type, and, in the case of single defects, on the degree of correlation between interstitial and vacancy distributions. The threshold varies within the interval [0.18–0.28] atomic fraction, the upper value corresponding to the case of bond defects, the lower to the uncorrelated distributions of single\langle 110\rangle split interstitials plus compensating vacancies.
Publisher: 
IOP Publishing
Publication date: 
27 Jan 2006
Authors: 

Giorgio Lulli, Eros Albertazzi, Simone Balboni, Luciano Colombo

Biblio References: 
Volume: 18 Issue: 6 Pages: 2077
Origin: 
Journal of Physics: Condensed Matter