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Type: 
Conference
Description: 
Ion implantation is a relevant technology for the fabrication of pn interfaces in several SiC electronic devices; ion implanted source/drain and body regions in commercial 4H-SiC MOSFET [1] and buried grids in JBSD [2] can be cited as examples. Previous studies have shown that the efficiency of the electrical doping by ion implantation increases with the increase of the post implantation annealing temperature [3-4] and time [5]. Previous studies have also shown that n-type 4H-SiC epi-layers treated at so high temperatures as those ...
Publisher: 
Ecs
Publication date: 
6 Oct 2016
Authors: 
Biblio References: 
Origin: 
PRiME 2016/230th ECS Meeting (October 2-7, 2016)