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Chapter 5-SiC Devices-5.3 Bipolar Diodes-Effects of Very High Neutron Fluence Irradiation on p+ n Junction 4H-SiC Diodes

Type: 
Journal
Description: 
Publisher: 
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Publication date: 
1 Jan 2007
Authors: 

F Moscatelli, A Scorzoni, A Poggi, M Passini, G Pizzocchero, R Nipoti

Biblio References: 
Volume: 556557 Pages: 917-920
Origin: 
Materials Science Forum
Link: 
http://scholar.google.com/scholar?cluster=15575802766517701747&hl=en&oi=scholarr

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