Using a combination of the CBED and the LACBED techniques in the transmission electron microscopy (TEM), we have investigated the strain field in the silicon active region of a shallow trench isolation structure, underlying a TiSi2 layer. Starting from the analysis of the deformation in a sample, thinned for TEM analysis, we have reconstructed the displacement field, simulating the split HOLZ lines visible in the experimental CBED patterns. From the comparison between the experimental LACBED patterns, taken in a suitable sample orientation to evidence the stressors distribution in the polycrystalline silicide layer, and the corresponding dynamically simulated ones, we have reproduced the strain field in the unthinned, bulk sample.