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Type: 
Book
Description: 
In previous reports [1–4], we have recently shown how a modification, based on a well defined sample tilt procedure, of the Z-contrast Annular Dark Field Scanning Transmission Electron Microscopy (ADF-STEM) technique pioneered by Pennycook and co-workers [5] may lead to the quantitative determination of the dopant depth distribution in Ultra Shallow Junctions (USJ) in Si.
Publisher: 
Springer, Berlin, Heidelberg
Publication date: 
1 Jan 2008
Authors: 

A Parisini, V Morandi, SA Mezzotero

Biblio References: 
Pages: 145-146
Origin: 
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany