Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

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Type:

Journal

Description:

Publisher:

Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-

Publication date:

1 Jan 2007

Authors:

Y Hijikata, S Yoshida, F Moscatelli, A Poggi, S Solmi, S Cristiani, R Nipoti

Biblio References:

Volume: 556557 Pages: 651-654

Origin:

Materials Science Forum

Link:

Scientific Productions