In this study a pyrolyzed photoresist film that has been used for protecting the implanted surface of a 4H-SiC wafer during post implantation annealing at 1800-1950 C has preserved on the wafer surface and used for the fabrication of ohmic contact pads on P+ implanted areas. The carbon film has been patterned by using a RIE O2-based plasma. A specific contact resistance of 9 10 5 cm2 has been obtained on P+ 1 1020 cm 3 implanted 4H-SiC. Micro-Raman characterizations show that the carbon cap is formed of a nano-crystalline graphitic phase.