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Electron states at the SiO2/4H–SiC interface have been investigated using capacitor structures and especially, the influence of excess nitrogen, introduced by ion implantation, at the interface is studied in detail. Implanted and nonimplanted n-type samples with an interfacial concentration of nitrogen of ∼1019 cm−3 and 1016 cm−3, respectively, were analyzed by capacitance-voltage (C-V) measurements, performed at different temperatures and probe frequencies, and thermal dielectric relaxation current (TDRC) measurements performed in the temperature range of 35–295 K. Three main categories of electron states are disclosed, true interface states (Dit), fast near interface states (NIToxfast) and slow near interface states (NIToxslow). The density versus energy distributions of Dit and NIToxfast have been deduced from the TDRC data and they are shown to give a close quantitative agreement with the shape …
American Institute of Physics
Publication date: 
15 Jul 2010

I Pintilie, CM Teodorescu, F Moscatelli, R Nipoti, A Poggi, S Solmi, LS Løvlie, BG Svensson

Biblio References: 
Volume: 108 Issue: 2 Pages: 024503
Journal of Applied Physics