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Type: 
Journal
Description: 
In this letter, it is shown how the application of a Z-contrast scanning transmission electron microscopy technique to the study of the dopant signal in ultrashallow junctions in Si can lead, in the case of As in Si, to a quantitative determination of the dopant depth profile at subnanometer resolution. The quantitative results thus obtained demonstrate that As accumulates on the Si side of the SiO2∕Si interface with a negligible loss of dopant into the oxide. Modeling of the effect indicates that segregation occurring during the recrystallization of the implanted layer is the dominant cause of this dopant pileup.
Publisher: 
AIP
Publication date: 
30 Jun 2008
Authors: 

A Parisini, V Morandi, S Solmi, PG Merli, D Giubertoni, M Bersani, JA Van den Berg

Biblio References: 
Volume: 92 Issue: 26 Pages: 261907
Origin: 
Applied Physics Letters