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Chapter 4-SiC Processing-4.2 Dielectrics and Passivation Layers-Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

Type: 
Journal
Description: 
Publisher: 
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Publication date: 
1 Jan 2007
Authors: 

A Poggi, F Moscatelli, Y Hijikata, S Solmi, M Sanmartin, F Tamarri, R Nipoti

Biblio References: 
Volume: 556557 Pages: 639-642
Origin: 
Materials Science Forum
Link: 
http://scholar.google.com/scholar?cluster=2431227132398005890&hl=en&oi=scholarr

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