Heterostructures of In 2 O 3 and SnO 2 were produced by sequential application of the physical-and chemical-vapor deposition techniques usually adopted for nanowire fabrication. In 2 O 3 nanowires exhibit a single crystal body-centered cubic structure oriented along the [1 0 0] direction and grow epitaxially on α-sapphire substrate by means of a transport and condensation method assisted by Au nanoparticles. Nucleation and growth occurred via direct vapor solid (VS) mechanism competing with catalyst-mediated vapor– ...