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Type: 
Journal
Description: 
In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55μm, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu∕Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55μm is experimentally demonstrated.
Publisher: 
AIP
Publication date: 
23 Jun 2008
Authors: 

M Casalino, L Sirleto, Luigi Moretti, M Gioffrè, G Coppola, Ivo Rendina

Biblio References: 
Volume: 92 Issue: 25 Pages: 251104
Origin: 
Applied Physics Letters