Type:
Journal
Description:
In this paper, the realization and the characterization of a resonant cavity enhanced (RCE) photodetector, completely silicon compatible and working at 1.55μm, are reported. The detector is a RCE structure incorporating a Schottky diode and its working principle is based on the internal photoemission effect. Taking advantage of a Cu∕Si Schottky diode fed on a high reflectivity Bragg mirror, an improvement in responsivity at 1.55μm is experimentally demonstrated.
Publisher:
American Institute of Physics
Publication date:
23 Jun 2008
Biblio References:
Volume: 92 Issue: 25 Pages: 251104
Origin:
Applied Physics Letters