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Type: 
Journal
Description: 
The diffusion of B atoms in silicon represents an emblematic issue for the indirect migration process of impurities in solid materials, as it is well-established that B diffuses in crystalline Si (c-Si) mainly through the interaction with self-interstitial Si atoms (Is). 1–4 Such a phenomenon is nowadays largely understood and quite precisely modeled as it has been studied for more than four decades by the material science community. Actually, it is both an exciting solid-state physics issue, due to the relevant underlying microscopic mechanisms, and a continuous challenging topic, because of the noteworthy applications in miniaturized microelectronics devices (B being the main p-type dopant in Si). Nonetheless, B diffusion is still studied since next technological designs scheduled by the International Technology Roadmap for Semiconductors (ITRS), 5 such as the sub-22 nm nodes, require dopant …
Publisher: 
Publication date: 
1 Jan 2013
Authors: 
Biblio References: 
Volume: 113 Pages: 031101
Origin: 
JOURNAL OF APPLIED PHYSICS