Type:
Conference
Description:
We have investigated the electrical activation of Fe implanted in InP in different concentrations and we have characterized by DLTS and by C-V analyses the electrical activity of the deep levels present in the band gap.
Publisher:
IEEE
Publication date:
8 May 2005
Biblio References:
Pages: 410-413
Origin:
International Conference on Indium Phosphide and Related Materials, 2005