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Type: 
Journal
Description: 
The local structure of fluorine incorporated in crystalline germanium by ion implantation and annealing has been investigated by x-ray absorption near edge structure (XANES) spectroscopy. The XANES spectra of different F m V n complexes have been simulated by ab initio calculations and compared with the experimental spectrum. In our study, we show that most of the F in Ge forms F 6 V 2 complexes, lengthening the Ge–Ge distances in the close proximity.
Publisher: 
Pergamon
Publication date: 
31 May 2017
Authors: 

A Sanson, HAW El Mubarek, AS Gandy, D De Salvador, E Napolitani, A Carnera

Biblio References: 
Volume: 62 Pages: 205-208
Origin: 
Materials Science in Semiconductor Processing