-A A +A
Type: 
Journal
Description: 
The thermal evolution of large boron-interstitials clusters (BICs) in crystalline Si has been studied by transmission electron microscopy (TEM). After ion implantation (20keV and 1×1014Si∕cm2) and annealing (815°C and 5min), large clusters (6–8nm) have been observed in correspondence of a narrow, highly doped Si:B layer (2×1020B∕cm3). Under prolonged annealing, such clusters dissolve, progressively shrinking their mean size below the TEM detection limit. The time evolution of such a BIC shrinking is fully compatible with the slow path dissolution kinetics recently published. These data suggest the identification of the slow dissolving BICs with the large observed clusters.
Publisher: 
AIP
Publication date: 
16 Jul 2007
Authors: 

S Boninelli, S Mirabella, E Bruno, F Priolo, F Cristiano, A Claverie, D De Salvador, G Bisognin, E Napolitani

Biblio References: 
Volume: 91 Issue: 3 Pages: 031905
Origin: 
Applied Physics Letters