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The defects produced in 4H–SiC epitaxial layers by irradiation with 800 keV C+ were characterized by Low Temperature Photoluminescence. Ion beam irradiation induces the formation of some sharp lines in the wavelength range 428–441 nm of the photoluminescence spectra, that are typically known as “alphabet lines”. These photoluminescence features are due to the recombination of excitons at structural defects. The photoluminescence results allow to single out two groups of peaks: the P1 lines (e–f–g) and the P2 lines (a–b–c–d), that exhibit a different trend with the ion fluence. The P1 group intensity increases with fluence and tends to reach a saturation value at high fluence. The P2 group yield, instead, exhibits a threshold at low fluence and then increases toward a saturation. Subsequent UV-laser irradiation decreases the intensity of the P2 lines related to a change in the structural configuration of the …
Publication date: 
1 Oct 2010

G Litrico, M Zimbone, G Baratta, ADM Marino, P Musumeci, L Calcagno

Biblio References: 
Volume: 268 Issue: 19 Pages: 2947-2950
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms