-A A +A
The redistribution of fluorine during solid phase epitaxial regrowth (SPER) of preamorphized Si has been experimentally investigated, explained, and simulated, for different F concentrations and temperatures. We demonstrate, by a detailed analysis and modeling of F secondary ion mass spectrometry chemical-concentration profiles, that F segregates in amorphous Si during SPER by splitting in three possible states:(i) a diffusive one that migrates in amorphous Si;(ii) an interface segregated state evidenced by the presence of a F accumulation peak at the amorphous-crystal interface;(iii) a clustered F state. The interplay among these states and their roles in the F incorporation into crystalline Si are fully described. It is shown that diffusive F migrates by a trap limited diffusion mechanism and also interacts with the advancing interface by a sticking-release dynamics that regulates the amount of F segregated at the …
American Physical Society
Publication date: 
26 Oct 2010

M Mastromatteo, D De Salvador, E Napolitani, F Panciera, G Bisognin, A Carnera, G Impellizzeri, S Mirabella, F Priolo

Biblio References: 
Volume: 82 Issue: 15 Pages: 155323
Physical Review B