Type:
Journal
Description:
Mild heating of the Zn (C 5 F 6 HO 2) 2· 2H 2 O· CH 3 (OCH 2 CH 2) 2 OCH 3 precursor allowed MOCVD deposition of ZnO films, in a low-pressure horizontal hot-wall reactor, on ITO substrates. The ZnO films were subsequently implanted with Sb ions. XRD measurements provided evidence that they consist of hexagonal,(002) and (101) oriented, crystals. UV–vis spectra showed that the transmittance of these films in the visible region is about 90%. The Sb implanted ZnO film showed a current-voltage characteristic that …
Publisher:
Pergamon
Publication date:
27 Dec 2016
Biblio References:
Origin:
Materials Science in Semiconductor Processing