The risetime of the 1.54 μm luminescence emission in Er:Si-nc co-doped glasses provides information on the mechanisms leading to population of the luminescent level, i.e. on the energy transfer time. In this paper we present a detailed study of this risetime in silica glasses after excitation in the wavelength region 360–860 nm by a continuously tunable pulsed Ti:Al2O3 laser. The emission risetime turns out to be dependent on the sample fabrication method used, i.e. implantation or co-sputtering and on the annealing temperature used to precipitate the silicon aggregates. The fastest energy transfer time observed in our samples is τtr ⩽ 2 μs. The risetime was found to be weakly dependent on the excitation wavelength up to around 700 nm where a sudden increase is observed. This increase is more pronounced in samples where the annealing temperature was such to produce amorphous aggregates rather than …