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B diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge. We find two distinct self-interstitial forms—a simple one with low entropy and a complex one with entropy∼ 30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket—we name it a morph. Computational modeling suggests that morphs exist in both self-interstitial and vacancylike forms, and are crucial for diffusion and defect dynamics in Ge, Si, and probably many other crystalline solids.
American Physical Society
Publication date: 
8 Apr 2013

Nick EB Cowern, Sergei Simdyankin, Chihak Ahn, Nick S Bennett, Jonathan P Goss, J-M Hartmann, Ardechir Pakfar, Silke Hamm, Jérôme Valentin, Enrico Napolitani, Davide De Salvador, Elena Bruno, Salvatore Mirabella

Biblio References: 
Volume: 110 Issue: 15 Pages: 155501
Physical review letters