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Type: 
Journal
Description: 
The crystallization kinetics of as-deposited and ion implanted amorphous Ge2Sb2Te5 thin films has been measured by time resolved reflectivity. An enhancement of the crystallization process occurred in the implanted samples. Raman scattering analysis was used to correlate the stability of the amorphous phase to its structure. The variation of the Raman signal after ion irradiation is consistent with a reduction in Ge–Te tetrahedral bonds, characteristic of the Ge coordination in amorphous Ge2Sb2Te5.
Publisher: 
AIP
Publication date: 
16 Jun 2008
Authors: 

R De Bastiani, AM Piro, MG Grimaldi, E Rimini, GA Baratta, G Strazzulla

Biblio References: 
Volume: 92 Issue: 24 Pages: 241925
Origin: 
Applied Physics Letters