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Type: 
Journal
Description: 
Substitutional impurities (B, Ga) in Si experienced an off-lattice displacement during ion-irradiation using a H+ or He+ beam at room temperature in random incidence. Samples were prepared by solid phase epitaxy (SPE) of pre-amorphized Si subsequently implanted with B and Ga at a concentration of about 1× 10 20 at. cm− 3 confined in a 300 nm thick surface region. The lattice location of impurities was performed by a channelling technique along different axes (\langle 100\rangle,\langle 110\rangle) using the 11 B (p, α) 8 Be reaction and standard RBS for B and Ga, respectively. The normalized channelling yield χ of the impurity signal increases with the ion fluence, indicating a progressive off-lattice displacement of the dopant during irradiation in random incidence, until it saturates at χ F< 1, suggesting a non-random displacement of the dopant. In particular, at saturation the off-lattice displacement of B and Ga …
Publisher: 
IOP Publishing
Publication date: 
20 May 2005
Authors: 

L Romano, AM Piro, MG Grimaldi, E Rimini

Biblio References: 
Volume: 17 Issue: 22 Pages: S2279
Origin: 
Journal of Physics: Condensed Matter