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Photoluminescence excitation spectra of InGaAs in InGaAs/GaAs heterostructure nanowire mats show clear antiresonances at the critical points of the joint density of states of the GaAs barrier. This remarkable effect arises from resonant light absorption in the upper GaAs segments, with ensuing reduction of photogenerated carriers reaching the lower InGaAs segments. The extent of this effect depends strongly on the excitation geometry of the wires, as well as on their areal density. Our work suggests that a careful design is required for optimal light conversion in nanowire-based solar cell devices.
American Institute of Physics
Publication date: 
29 Apr 2013

Marta De Luca, Antonio Polimeni, Marco Felici, Antonio Miriametro, Mario Capizzi, Francesco Mura, Silvia Rubini, Faustino Martelli

Biblio References: 
Volume: 102 Issue: 17 Pages: 173102
Applied Physics Letters