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Type: 
Journal
Description: 
We compare the In content of quaternary InxGa1−xAs1−yNy and ternary InxGa1−xAs layers grown by plasma-assisted molecular beam epitaxy in similar conditions. Indium incorporation is found to decrease monotonically with increasing nitrogen content. The magnitude of the reduction strongly depends on N concentration, reaching about 20% of the nominal In content for N concentrations of y=0.044.
Publisher: 
American Institute of Physics
Publication date: 
3 Apr 2006
Authors: 

S Rubini, G Bais, A Cristofoli, M Piccin, R Duca, C Nacci, SILVIO Modesti, E Carlino, F Martelli, ALFONSO Franciosi, G Bisognin, D De Salvador, P Schiavuta, M Berti, AV Drigo

Biblio References: 
Volume: 88 Issue: 14 Pages: 141923
Origin: 
Applied physics letters