We compare the In content of quaternary InxGa1−xAs1−yNy and ternary InxGa1−xAs layers grown by plasma-assisted molecular beam epitaxy in similar conditions. Indium incorporation is found to decrease monotonically with increasing nitrogen content. The magnitude of the reduction strongly depends on N concentration, reaching about 20% of the nominal In content for N concentrations of y=0.044.
American Institute of Physics
3 Apr 2006
Volume: 88 Issue: 14 Pages: 141923
Applied physics letters